关于GSD的高束流离子注入时的腔体压力植入剂量的补偿 未分类

关于GSD的高束流离子注入时的腔体压力植入剂量的补偿

 QQ
知识梳理与准备一: 理想气体常数 R 与玻尔兹曼常数 \( k_B \) 的关系 简单直接的回答是: 理想气体常数 \( R \) 与玻尔兹曼常数 \( k_B \) 的关系是通过阿伏伽德罗常数 \( N_A \) 联系起来的。 具体关系式为: \( R = N_A \cdot k_B \) 详细解释 让我们一步步来看: 理想气体常数 (R) 它的适用对象是 宏观系统 的 1 摩尔 气体。 在方程 \( PV = nRT \) 中: \( n \) 是气体的物质的量,单位是 摩尔 (mol)。 所以 \( R \) 是 每摩尔 气体的常数。 玻尔兹曼常数 \( k_B \) 它的适用对象是 微观粒子(单个分子或原子)。 它是连接宏观物理量(如温度、能量)和微观物理量的桥梁。 理想气体方程用 \( k_B \) 可以改写为:\( PV = N k_B T \) 这里 \( N \) 代表气体中 分子(或原子)的总数目。 所以 \( k_B \) 是 每个粒子 的常数。 数值关系 我们可以用数值来验证这个关系: 已知 \( R \approx 8.314 \text{J·mol}^{-1}\text{·K}^{-1} \) 已知 \( N_A \approx 6.022 \times 10^{23} \text{mol}^{-1} \) 计算 \( k_B \): \( k_B = \frac{R}{N_A} = \frac{8.314}{6.022 \times 10^{23}} \approx 1.381 \times 10^{-23} \text{J·K}^{-1} \) 知识梳理与准备二: 离子中和的指数衰减模型推导 一、物理背景 当离子束穿过长度为 x 的气体区域时,离子可能与气体分子发生 电荷交换碰撞(Charge Exchange Collision)。 这种碰撞导致部分离子失去电荷,变为中性原子。 碰撞的概率取决于: 气体分子密度 \( n \)(单位:m⁻³); 电荷交换截面 \( \sigma \)(单位:m²); 离子行进的路径长度 \( x…
A list for Azalea (Preliminary) What_To

A list for Azalea (Preliminary)

 QQ
Here's a non-exhaustive list of things we (Azalea and QQ) may prepare for this meeting:- Define a list of people you would like Azalea Li Suen WEE to meet. Think of team members, key collaborators, and important stakeholders of their future tasks.To Meet Office colleagues: o Kit Ping (Dep Secretary,o Khoo (section manager of Process), o Hock Chye (section manager of Quality) ando Bala (Dep HOD)Introduce to all Process Owner team and Some Shift Engineer including (first time join morning AVP WK40.5)o Yen Nee and o Yee HanCo-work function party: o Fong Eng CHANG (production manager)  o Shy Ching (Industrial Engineering implant coordinator)- Organize several tasks for Azalea Li Suen WEE to get them started in their new position.o STM Ang Mo Kio Tour (Office Building and Fab Building) => NFC Check-In Point WK40o Major Tool Type locationo File system of STM Daily Task (T-drive, Common folder, working file/folder)- Plan time for all mandatory trainings that Azalea Li Suen WEE needs to complete.o FAB SAFTY/ ESH/IMPL evacuation gathering points (WK40)o FAB SAFTY/ PPE and Eye shower point (WK40)o FAB SAFTY/ Fab Hazard and Safety (WK40)o Semiconductor/ Semiconductor Physic and Fab Process training (WK41~42)o Semiconductor/ Implant…
Welcome to our new comer– Azalea Li Suen WEE What_To

Welcome to our new comer– Azalea Li Suen WEE

 QQ
We are glad to see 2024 new comer Azalea, who will spend 5 months with us in STMicroelectronic and now she is under orientation and on-boarding training . During these 5 months, she will experience whole Semiconductor Manufacturing in Ang Mo Kio and work closely with ion implant process team. who are we? we are Singapore STM ion implant process team, which in charge all engineering in process of Ion Implantation and Rapid Thermal Process. How about STMicroelectronics? STMicroelectronics, also STM, it's a worldwide big semiconductor company, whose Products be used very widely , from iPhone accelerate sensor, eCAR IGBT power IC and SiC for future Power Devices , you can see STM chips inside, also them be seen in the great developing single board like STM32 with our STM solution and some super challenging but exciting products like the world biggest Camera lens sensor in Las Vegas “the…